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Zhejiang
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2024-01-09 03:07
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Company Profile
Ningbo Sibranch Microelectronics Technology Co.,Ltd.By certification [File Integrity]
Contact:saibang888(Mr.)
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Area:Zhejiang
Address:Zhejiang
Website:http://www.sibranchwafer.com/ http://saibang888.ruiching.com/
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CZ Silicon Wafer is a high-quality silicon substrate used in the production of advanced semiconductor devices. The CZ (Czochralski) method is utilized to manufacture these silicon wafers, ensuring a high level of purity and uniformity. This type of silicon wafer boasts superior electrical performance and a low defect density, making it an ideal choice for a wide range of semiconductor applications.
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CZ Silicon Wafer is known for its excellent flatness, surface quality, and crystallographic orientation. These qualities enable the production of high-performance semiconductor devices with superior reliability and efficiency. The CZ method allows for the production of larger diameter wafers than other techniques, such as the Float Zone method, which can lead to increased yield and lower production costs.
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In addition, CZ Silicon Wafers are highly customizable, with specifications that can be tailored to meet the specific requirements of different semiconductor applications. This makes them a versatile solution for manufacturers looking to produce advanced electronic devices with superior performance and reliability.
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Overall, CZ Silicon Wafer is a high-quality substrate that is well-suited for a wide range of semiconductor applications. Its superior electrical properties, low defect density, and high level of purity make it an ideal choice for manufacturers looking to produce cutting-edge electronic devices.
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Growth | CZ, MCZ, FZ |
Grade | Prime, Test, Dummy, etc. |
Diameter | Other diameters, such as 10mm, 12.7mm, 1.5″, 35mm, 40mm, 2.5″ are also possible |
Thickness | 50~3000um |
Finish | As cut, lapped, etched, SSP, DSP, etc |
Orientation | (100) (111) (110) (211) (311) (511) (531) etc. |
Off cut | Up to 4 deg |
Type/Dopant | P/B, N/Phos, N/As, N/Sb, Intrinsic |
Resistivity | FZ: Up to 20k ohm-cm |
CZ/MCZ: From 0.001 to 150 ohm-cm | |
Thin films | * PVD: Al, Cu, Au, Cr, Si, Ni, Fe, Mo, etc. |
* PECVD: Oxide, Nitride, SiC, etc. | |
* Silicon epitaxial wafers and epitaxial services (SOS, GaN, GOI etc). | |
Processes | DSP, ultra thin, ultra flat, etc. |
Downsizing, back grinding, dicing, etc. | |
MEMS |
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